Can use graphene to achieve high-power semiconductor equipment to cool down dramatically

According to a report by the Physicist Network on May 9 (Beijing time), researchers at the Burns School of Engineering at the University of California, Riverside, have developed a new technology that can achieve significant cooling of high-power semiconductor devices with graphene. Solve the heat dissipation problem of semiconductor materials used in traffic lights and electric vehicles. The relevant research report was published in the journal Nature News on May 8. Since the 1990s, the semiconductor material gallium nitride (GaN) has been used in the manufacture of glare and has been used in wireless devices because of its high efficiency and high voltage operation. However, like all high-power operating devices, GaN transistors emit a significant amount of heat that needs to be removed quickly and efficiently. Scientists have tried various thermal management methods such as flip chip and composite substrate, but the results are not satisfactory. How to cool these devices still plagues the academic world, and the market share and application range of the GaN electronics industry are also limited because it is difficult to dissipate heat. This situation will be improved based on new technologies developed by nanodevice laboratories. The team, led by professor of electrical engineering Alexander Barankin, found that during the micro-Raman spectral temperature measurement, nitrogen was introduced in high-power operation by introducing alternating heat-dissipating channels made of multilayer graphene. The hot spot in the gallium transistor is reduced by 20 ° C and the life of the associated device is extended by 10 times. Barankin said that this represents a revolutionary development in the field of thermal management. Unlike metal or semi-conductor films, multi-layer graphene maintains good thermal properties even when its thickness is only a few nanometers, making them an excellent alternative for making side-conducting sheets and wires. Researchers have designed and built graphene "quilts" on GaN transistors to remove and conduct heat from hot spots. Computer simulations show that using a substrate with a higher thermal resistance enables graphene "quilts" to function better on gallium nitride devices. The life of high-power LED light source is more than 4 times that of high-pressure sodium lamp, and the power consumption is only one tenth of that of incandescent lamp. Therefore, it is increasingly used in landscape lighting, traffic lights, etc., but the heat dissipation problem has always hindered its Rapidly popularized. Under normal circumstances, the heat generated by the LED light source accounts for about 70% of the total power consumed. If the heat cannot be exported, it will affect the product life cycle and luminous efficiency. The hot spot is reduced by 20 ° C and the life is extended by 10 times. The new method of cooling mentioned in this article is really exciting, and it is conceivable that once the technology is mature and put into use, the night of the city will be even more dazzling.

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